Options
2017
Conference Paper
Titel
3D simulation of silicon-based single-electron transistors
Alternative
3D-Simulation von siliciumbasierten Einzelelektronentransistoren
Abstract
Single electron transistors based on silicon nanopillars were investigated with regard to their current voltage characteristics. The simulations make use of the commercial quantum simulator nextnano++, but extend its functionality for the calculation of tunneling currents. A comparison with results obtained by the Monte-Carlo based tunneling simulator SIMON is presented. Investigations include the variation of geometrical quantities and quantum dot doping.