3D simulation of silicon-based single-electron transistors
3D-Simulation von siliciumbasierten Einzelelektronentransistoren
Single electron transistors based on silicon nanopillars were investigated with regard to their current voltage characteristics. The simulations make use of the commercial quantum simulator nextnano++, but extend its functionality for the calculation of tunneling currents. A comparison with results obtained by the Monte-Carlo based tunneling simulator SIMON is presented. Investigations include the variation of geometrical quantities and quantum dot doping.