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3D simulation of silicon-based single-electron transistors

3D-Simulation von siliciumbasierten Einzelelektronentransistoren
: Klüpfel, Fabian J.; Pichler, Peter

Postprint urn:nbn:de:0011-n-4736656 (673 KByte PDF)
MD5 Fingerprint: d6bacc593daa4c86a77eb93bdbd9749b
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Created on: 21.11.2017

Japan Society of Applied Physics -JSAP-; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 : 7-9 September 2017, Kamakura, Japan
Piscataway, NJ: IEEE, 2017
ISBN: 978-4-86348-610-2
ISBN: 978-4-86348-611-9
ISBN: 978-4-86348-612-6
ISBN: 978-1-5386-0372-7
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2017, Kamakura/Japan>
European Commission EC
H2020; 688072; IONS4SET
Conference Paper, Electronic Publication
Fraunhofer IISB ()
Quantum Dot; single electron transistor; numerical simulation

Single electron transistors based on silicon nanopillars were investigated with regard to their current voltage characteristics. The simulations make use of the commercial quantum simulator nextnano++, but extend its functionality for the calculation of tunneling currents. A comparison with results obtained by the Monte-Carlo based tunneling simulator SIMON is presented. Investigations include the variation of geometrical quantities and quantum dot doping.