Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

3D simulation of silicon-based single-electron transistors

3D-Simulation von siliciumbasierten Einzelelektronentransistoren
 
: Klüpfel, Fabian J.; Pichler, Peter

:
Postprint urn:nbn:de:0011-n-4736656 (673 KByte PDF)
MD5 Fingerprint: d6bacc593daa4c86a77eb93bdbd9749b
© IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Created on: 21.11.2017


Japan Society of Applied Physics -JSAP-; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 : 7-9 September 2017, Kamakura, Japan
Piscataway, NJ: IEEE, 2017
ISBN: 978-4-86348-610-2
ISBN: 978-4-86348-611-9
ISBN: 978-4-86348-612-6
ISBN: 978-1-5386-0372-7
pp.77-80
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) <2017, Kamakura/Japan>
European Commission EC
H2020; 688072; IONS4SET
English
Conference Paper, Electronic Publication
Fraunhofer IISB ()
Quantum Dot; single electron transistor; numerical simulation

Abstract
Single electron transistors based on silicon nanopillars were investigated with regard to their current voltage characteristics. The simulations make use of the commercial quantum simulator nextnano++, but extend its functionality for the calculation of tunneling currents. A comparison with results obtained by the Monte-Carlo based tunneling simulator SIMON is presented. Investigations include the variation of geometrical quantities and quantum dot doping.

: http://publica.fraunhofer.de/documents/N-473665.html