Modeling the post-implantation annealing of platinum

Platinum in silicon is conveniently used for lifetime engineering in power devices. Its deep energy level ensures an efficient recombination of charge carriers while it is sufficiently far away from mid bandgap to be a low generation center. Contemporary development aims at replacing diffusion from platinum silicide by implantation. To obtain a better understanding of the mechanisms involved, a series of experiments has been performed in this work and interpreted by numerical simulation.