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Modeling the post-implantation annealing of platinum

Modellierung der Ausheilung von Platin nach der Ionenimplantation
: Badr, Elie; Pichler, Peter; Schmidt, Gerhard

Postprint urn:nbn:de:0011-n-3642140 (1.0 MByte PDF)
MD5 Fingerprint: 079048fba40dfbc3a256669510c1e3bf
Created on: 6.11.2015

Pichler, Peter (Hrsg.):
Gettering and defect engineering in semiconductor technology XVI : Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Dürnten: Trans Tech Publications, 2016 (Diffusion and defect data. B, Solid state phenomena 242)
ISBN: 978-3-03835-608-0
ISBN: 978-3-0357-0083-1
DOI: 10.4028/
International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST) <16, 2015, Bad Staffelstein>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
platinum; silicon; ion implantation; annealing

Platinum in silicon is conveniently used for lifetime engineering in power devices. Its deep energy level ensures an efficient recombination of charge carriers while it is sufficiently far away from mid bandgap to be a low generation center. Contemporary development aims at replacing diffusion from platinum silicide by implantation. To obtain a better understanding of the mechanisms involved, a series of experiments has been performed in this work and interpreted by numerical simulation.