A 200 mW, high-gain GaN-based D-Band Power Amplifier for 6G Communication Applications

This paper presents a 6-stage D-band power amplifier (PA) microwave monolithic integrated circuit (MMIC) for 6G communication applications. The circuit is designed to provide a uniform performance over the design frequency range, which stretches from 130 to 150 GHz. An explanation of critical features of the underlying 70-nm gallium nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) technology, as well as a detailed elaboration on design principles are given. The presented MMIC achieves a saturated output power (Psat) of more than 200 mW and a power-added efficiency (PAE) of more than 8 %. Moreover, the output-referred 1-dB compression point (OP1-dB) and small-signal gain (|S21|) are as high as 18.8 dBm and 29.7 dB, respectively.