2021
Presentation
Title

Frabrication and Evaluation of 4H-SiC Double Trench MOSFETs on 6-inch Wafer

Title Supplement
Presentation held at ICAE 2021, 6th International Conference on Advanced Electromaterials, Hybrid Conference, November 9-12, 2021, Jeju, Korea
Author(s)
Lim, Minwho  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Kim, Seongjun
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Rusch, Oleg  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Kang, Min-Jae
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Sung, Mi-Je
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Kwak, Juyoung
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Lee, Nam-Suk
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Shin, Hoon-Kyu
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Erlbacher, Tobias  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Bauer, Anton
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Conference
File(s)
Rights
Use according to copyright law
DOI
Language
English