2021
Titel

Frabrication and Evaluation of 4H-SiC Double Trench MOSFETs on 6-inch Wafer
Titel Supplements
Presentation held at ICAE 2021, 6th International Conference on Advanced Electromaterials, Hybrid Conference, November 9-12, 2021, Jeju, Korea
Author(s)
Lim, Minwho
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Kim, Seongjun
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Rusch, Oleg
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Kang, Min-Jae
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Sung, Mi-Je
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Kwak, Juyoung
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Lee, Nam-Suk
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Shin, Hoon-Kyu
National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Korea
Erlbacher, Tobias
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Bauer, Anton
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Konferenz
File(s)
Language
Englisch