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  4. Silicon-Based Monolithic Triple-Junction Solar Cells with Conversion Efficiency >34%
 
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2020
  • Konferenzbeitrag

Titel

Silicon-Based Monolithic Triple-Junction Solar Cells with Conversion Efficiency >34%

Abstract
Triple-junction solar cells with top cells made from III-V compound semiconductors on a silicon bottom cell show conversion efficiencies beyond the theoretical limit of single-junction devices, so this is one of the promising technologies for terrestrial photovoltaics. In this work, a III-V//Si tandem device with 34.5% efficiency is presented and further developments are discussed. A detailed investigation of the silicon bottom cell revealed, that with optimum wafer resistivity (~1 Ω cm) and low-temperature passivation of the cell perimeter, the perimeter losses can be reduced to ~0.2%abs. This corresponds to an efficiency gain of up to 0.8%abs for the current devices.
Author(s)
Müller, R.
Schygulla, P.
Lackner, D.
Höhn, O.
Hauser, H.
Richter, A.
Fell, A.
Bläsi, B.
Predan, F.
Benick, J.
Hermle, M.
Dimroth, F.
Glunz, S.
Hauptwerk
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020
Konferenz
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) 2020
DOI
10.4229/EUPVSEC20202020-3AO.7.2
File(s)
N-618166.pdf (1.1 MB)
Language
Englisch
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ISE
Tags
  • Photovoltaik

  • Multijunction Solar C...

  • Silicium-Photovoltaik...

  • III-V- und Konzentrat...

  • Herstellung und Analy...

  • III-V Epitaxie und So...

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