2018
Conference Paper
Title

Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations

Other Title
Platin in Silicium nach Implantation und Ausheilung: Vom Experiment zur Prozess- und Bauelementesimulation
Abstract
Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 °C and the dose range from 1E12 to 1E13 cm−2. The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.
Author(s)
Hauf, Moritz
Infineon Technologies AG
Schmidt, Gerhard
Infineon Technologies Austria AG
Niedernostheide, Franz-Josef
Infineon Technologies AG
Johnsson, Anna  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Pichler, Peter  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Mainwork
Conference
Open Access
File(s)
Rights
Use according to copyright law
DOI
Language
English
Keyword(s)