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Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations

Platin in Silicium nach Implantation und Ausheilung: Vom Experiment zur Prozess- und Bauelementesimulation
: Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter

Postprint urn:nbn:de:0011-n-5557995 (667 KByte PDF)
MD5 Fingerprint: 8579275b8ee2759d43430d0a39853e19
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Created on: 6.9.2019

Häublein, Volker ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
22nd International Conference on Ion Implantation Technology, IIT 2018. Proceedings : 16-21 September 2018, Würzburg, Germany
Piscataway: IEEE, 2018
ISBN: 978-1-5386-6829-0
ISBN: 978-1-5386-6828-3 (Print)
ISBN: 978-1-5386-6827-6
ISBN: 978-1-5386-6830-6
International Conference on Ion Implantation Technology (IIT) <22, 2018, Würzburg>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
platinum implantation; silicon; diffusion; process simulation; device simulation

Based on experimental findings of platinum clusters, a model of post-implantation annealing of platinum in silicon has been developed for the temperature range from 850 to 900 °C and the dose range from 1E12 to 1E13 cm−2. The model has been implemented in a full TCAD simulation chain to predict the electrical behaviour of platinum-diffused diodes.