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  4. Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects
 
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2018
Poster
Title

Raman spectroscopy characterization of ion implanted 4H-SiC and its annealing effects

Title Supplement
Poster presented at ECSCRM 2018, 12th European Conference on Silicon Carbide & Related Materials, September 2-6, 2018, Birmingham, UK
Author(s)
Xu, Zongwei
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Song, Y.
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Rommel, Mathias  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Liu, T.
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Kocher, Matthias  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
He, Z.D.
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Wang, H.
State Key Laboratory of Separation Membranes and Membrane Processes, Tianjin Polytechnic University, China
Yao, B.T.
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Liu, L.
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Fang, F.Z.
State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, China
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2018  
DOI
10.24406/publica-fhg-401605
File(s)
N-510025.pdf (1.46 MB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • 4H-SiC

  • raman spectroscopy

  • ion implantation

  • defect

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