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  4. Wafer level packaging of MEMS and 3D integration with CMOS for fabrication of timing microsystems
 
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2016
Conference Paper
Title

Wafer level packaging of MEMS and 3D integration with CMOS for fabrication of timing microsystems

Abstract
The following paper gives an insight on the packaging concepts and fabrication processes used to ultimately manufacture a timing module at wafer scale. The packaging of the timing module consists in the integration of an ASIC together with a Quartz-based or Twin-Silicon resonator MEMS which require to be hermetically sealed under vacuum for proper function. The 3D-integration enables a significant miniaturization of the complete system. Subsequently a BAW (Bulk Acoustic Wave) resonator can be further associated over the quartz resonator to form a MEMS-based freely programmable oscillator for stable clock generation, covering a large frequency range between 1 and 50 MHz. The principal fabrication processes include the implementation of Through-Silicon Vias (TSV) in active CMOS wafers, temporary wafer bonding for thin wafer handling and wafer bonding for metallic sealing under vacuum and formation of electrical interconnects. The components were packaged by chip to wafer assembly onto active CMOS wafers with TSVs and subsequent wafer to wafer bonding with a corresponding cavity cap wafer for vacuum encapsulation. All processes have been developed and performed at 200 mm industrial wafer scale.
Author(s)
Manier, Charles-Alix  
Zoschke, Kai  
Wilke, Martin
Oppermann, Hermann  
Ruffieux, David
Piazza, Silvio dalla
Suni, Tommi
Dekker, James
Allegato, Giorgio
Lang, Klaus-Dieter  
Mainwork
DTIP 2016, Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS  
Conference
Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP) 2016  
DOI
10.1109/DTIP.2016.7514832
Language
English
Fraunhofer-Institut für Zuverlässigkeit und Mikrointegration IZM  
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