Experimental proof of the slow light-induced degradation component in compensated n-type silicon
We present new experimental data on light-induced degradation due to the boron oxygen defect in compensated n-type silicon. We are the first to show that both defect components known from p-type silicon are formed in compensated n-type silicon. A parameterization of the injection dependent recombination activity of the slower formed defect component is established. The formation kinetics of both defect components are studied and modeled under different conditions. It is found that the same rate factors as in p-type can describe the degradation, if the actual hole concentration under illumination is taken into account. The regeneration process known to permanently deactivate boron oxygen defects in p-type is successfully applied to n-type material and the illumination stability of the regenerated state is tested and proven.
Gettering and defect engineering in semiconductor technology XVI