The efficiency of hydrogen-doping as a function of implantation temperature

For a conventional proton implantation doping process applied to crystalline silicon comprising proton implantation and subsequent furnace annealing the effect of the substrate temperature set during implantation is examined for temperatures between 50 °C and 200 °C. The formation efficiency of the hydrogen related donors in the maximum of the related doping profiles is shown to linearly increase with the implantation temperature. Regarding the dose rate, a reverted effect is found. The appearing effects are explained by considering the evolution of the initial implantation damage towards a vacancy related precursor species of the hydrogen related donor. Additional information about the implantation temperature dependent defect distribution is gained from Fourier-DLTS results.