Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence

A new tool for characterizing extended defects in Silicon Carbide (SiC) based on photoluminescence imaging is presented. In contrast to other techniques like Defect Selective Etching (DSE) or X-ray topography this technique is both fast and non-destructive. It is shown that several defect types, especially those relevant for the performance of electronic devices on SiC (i.e. Stacking Faults and Basal Plane Dislocations) can be investigated. The tool is therefore usable in research and development for a quick feedback on process related defect generation as well as in a production environment for quality control.