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  4. Simultaneous simulation of systematic and stochastic process variations
 
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2014
Conference Paper
Title

Simultaneous simulation of systematic and stochastic process variations

Abstract
An efficient approach is presented and demonstrated which enables the simultaneous simulation of the impact of several sources of process variations, ranging from equipment-induced to stochastic ones, which are caused by the granularity of matter. Own software is combined with third party tools to establish a hierarchical simulation sequence from equipment to circuit level. Correlations which occur because some sources of variability affect different devices and different device quantities can be rigorously studied.
Author(s)
Lorenz, Jürgen  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Bär, Eberhard  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Burenkov, Alex  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Evanschitzky, Peter  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Asenov, Asen
Glasgow University
Wang, Liping
Glasgow University
Wang, Xingsheng
Glasgow University
Brown, Andrew
GSS
Millar, Campbell
GSS
Reid, David
GSS
Mainwork
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2014. Proceedings  
Project(s)
SUPERTHEME  
Funder
European Commission EC  
Conference
International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014  
Link
Link
DOI
10.1109/SISPAD.2014.6931620
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • process variations

  • systematic variations

  • statistical variations

  • lithography

  • etching

  • Equipment Simulation

  • process simulation

  • device simulation

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