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  4. Modeling of exploration of reversible contrast enhacement layers for double exposure lithography
 
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2010
Conference Paper
Title

Modeling of exploration of reversible contrast enhacement layers for double exposure lithography

Abstract
This paper discusses the modeling of reversible contrast enhacement layers (RCEL)for advanced optical lithogrpahy. An efficient implementation of the Waveguide method is employed to investigate the process capability of RCEL and to identify the most appropriate material and exposure parameters. It is demonstrated that the consideration of near field diffraction effects and of bleaching dynamics is important to achieve correct results. A large refractive index of the resist and the RCEL improves the achievable lithographic performance. It is shown that RCEL layers can be used to enhance the performance of a NA=0.6 scanner to create a high contrast images with a pitch of 80nm.
Author(s)
Shao, F.
Cooper, G.D.
Chen, Z.
Erdmann, A.  
Mainwork
Optical microlithography XXIII  
Conference
Conference "Optical Microlithography" 2010  
DOI
10.1117/12.846525
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • lithography simulation

  • double exposure

  • reversible contrast enhancement layer

  • optical nonlinearity

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