Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes

This paper uses advanced modeling techniques to explore interactions between the two lithography processes in a litho-cure-etch process and to qualify their impact on the final resist profiles and process performance. Specifically, wafer topography effects due to different optical properties of involved photoresist materials, linewidth variations in the second lithography step due to partial protection of imperfectly cured resist, and acid/quencher diffusion effects between resist materials are investigated. The paper highlights the results of the simulation work package of the European MD3 project.