MOCVD of ferroelectric thin films

A low pressure chemical vapor deposition system for growing ferroelectric thin films of lead-zirkonate-titanate has been developed. The liquid metal precursors are dosed by up to four self-contained dispense systems with vaporizers. The deposition is carried out in a cold-wall reactor at pressures below 1 Torr and at temperatures between 330 deg C and 450 deg C. The thickness of the deposited films ranged from 10 nm to 600 nm. The investigated films are lead-titanate PbTiO3 and lead-zirconate-titanate Pb(Zr,Ti)O3. They show high permittivity values and ferroelectric hysteresis of the electrical polarisation, which could be increased by post-deposition annealing.