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  4. Repair of clear defects on X-ray masks by ion-induced metal deposition
 
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1989
Conference Paper
Title

Repair of clear defects on X-ray masks by ion-induced metal deposition

Abstract
To investigate the repair of clear defects on X-ray masks by ion-induced metal deposition, a photomask repair system was modified to allow for the localized deposition of tungsten from a gas jet of W(CO) sub 6 vapor. With this system, dense W layers could be deposited at rates of up to 4 nm/s; the X-ray opacity of layers having a thicknes of down to 200 nm was demonstrated by Y-ray lithographic resist exposures using synchrotron radiation.
Author(s)
Petzold, H.-C.
Burghause, H.
Putzar, R.
Weigmann, U.
Economou, N.P.
Stern, L.A.
Mainwork
Electron-beam x-ray and ion-beam technlogy. Submicrometer lithographies VIII  
Conference
Society of Photo-Optical Instrumentation Engineers (Conference) 1989  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • focussed ion beam

  • mask repair

  • X-ray lithography

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