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  4. Direct growth of III-V/silicon triple-junction solar cells with 19.7% efficiency
 
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2018
Journal Article
Title

Direct growth of III-V/silicon triple-junction solar cells with 19.7% efficiency

Abstract
Monolithic multi-junction solar cells made on active silicon substrates are a promising pathway for low-cost high-efficiency devices. We present results of GaInP/GaAs/Si triple-junction solar cells, fabricated by direct growth on silicon in a metal-organic vapor phase epitaxy reactor using a GaAs y P 1-y buffer structure to overcome the lattice mismatch between Si and GaAs. A low-temperature (750 °C) Si surface preparation process and a SiN x diffusion barrier at the rear side have been implemented to maintain the minority carrier lifetime in the Si bottom cell. Conversion efficiencies up to 19.7% have been achieved under AM 1.5g spectral conditions. The cells are compared with identical GaInP/GaAs dual-junction solar cells grown on bulk GaP and GaAs substrates to identify loss mechanisms. Subcell electrical characterization using electroluminescence reveals a significant voltage loss of the III-V subcells on Si, compared with the same structures grown on GaP or GaAs. Electron channeling contrast imaging of the metamorphic GaAs y P 1-y buffer shows a three times higher threading dislocation density on Si (1.4 × 10 8 cm -2 ) than on GaP substrates, and atomic force microscopy shows holes in the GaAs y P 1-y buffer on Si that are not observed on GaP. Approaches to reach lower defect densities for the III-V layers on silicon are discussed.
Author(s)
Feifel, Markus
Fraunhofer-Institut für Solare Energiesysteme ISE  
Ohlmann, Jens  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Benick, Jan  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Hermle, Martin  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Belz, Jürgen
Philipps-Universität Marburg
Beyer, Andreas
Philipps-Universität Marburg
Volz, Kerstin
Philipps-Universität Marburg
Hannappel, Thomas
TU Ilmenau
Bett, Andreas W.  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Lackner, David  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Dimroth, Frank  
Fraunhofer-Institut für Solare Energiesysteme ISE  
Journal
IEEE Journal of Photovoltaics  
Project(s)
MehrSi
Funder
Bundesministerium für Bildung und Forschung BMBF (Deutschland)  
Open Access
DOI
10.24406/publica-r-255473
10.1109/JPHOTOV.2018.2868015
File(s)
N-528013.pdf (731.15 KB)
Rights
Under Copyright
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • silicon

  • photovoltaic cell

  • gallium arsenide

  • lattice

  • substrates

  • Photovoltaik

  • Silicium-Photovoltaik

  • III-V und Konzentrator-Photovoltaik

  • Neuartige Photovoltaik-Technologien

  • Dotierung und Diffusion

  • III-V Epitaxie und Solarzellen

  • cells

  • arsenide

  • III-V Epitaxie und Materialentwicklung

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