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  4. Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures
 
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2018
Journal Article
Titel

Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures

Abstract
We present results on the investigation of the substrate bias effect on the growth behavior of iridium films deposited on A-plane sapphire by radio frequency (rf) sputtering at low substrate temperatures. Films deposited without substrate bias were compared to films deposited with simultaneous application of a second rf-plasma on the substrate. Resulting films were characterized by scanning electron microscopy, X-ray diffraction, and electron backscattering diffraction. We find that the application of an additional substrate bias has a strong effect on the growth behavior of Ir in such a way that preferential growth of iridium (001) on sapphire (11−20) at high deposition rates and at substrate temperatures as low as 350 °C becomes feasible.
Author(s)
Meyer, F.
Fraunhofer-Institut für Werkstoffmechanik IWM
Oeser, S.
Fraunhofer-Institut für Werkstoffmechanik IWM
Graff, A.
Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
Reisacher, E.
Fraunhofer-Institut für Werkstoffmechanik IWM
Carl, E.-R.
Fraunhofer-Institut für Werkstoffmechanik IWM
Fromm, A.
Fraunhofer-Institut für Werkstoffmechanik IWM
Wirth, M.
Fraunhofer-Institut für Werkstoffmechanik IWM
Groener, L.
Fraunhofer-Institut für Werkstoffmechanik IWM
Burmeister, F.
Fraunhofer-Institut für Werkstoffmechanik IWM
Zeitschrift
Thin solid films
DOI
10.1016/j.tsf.2018.01.032
File(s)
N-487256.pdf (5.44 MB)
Language
English
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Fraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
Fraunhofer-Institut für Werkstoffmechanik IWM
Tags
  • bias-assisted rf-sput...

  • Iridium

  • heteroepitaxy

  • ion assisted film gro...

  • low temperature

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