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Effect of substrate bias on the growth behavior of iridium on A-plane sapphire using radio frequency sputtering at low temperatures

: Meyer, F.; Oeser, S.; Graff, A.; Reisacher, E.; Carl, E.-R.; Fromm, A.; Wirth, M.; Groener, L.; Burmeister, F.

Postprint urn:nbn:de:0011-n-4872567 (5.4 MByte PDF)
MD5 Fingerprint: 4bb417fdac5db04201809a727ffdc351
Created on: 20.02.2020

Thin solid films 650 (2018), pp.65-70
ISSN: 0040-6090
Journal Article, Electronic Publication
Fraunhofer IWM ()
Fraunhofer IMWS ()
bias-assisted rf-sputtering; Iridium; heteroepitaxy; ion assisted film growth; low temperature

We present results on the investigation of the substrate bias effect on the growth behavior of iridium films deposited on A-plane sapphire by radio frequency (rf) sputtering at low substrate temperatures. Films deposited without substrate bias were compared to films deposited with simultaneous application of a second rf-plasma on the substrate. Resulting films were characterized by scanning electron microscopy, X-ray diffraction, and electron backscattering diffraction. We find that the application of an additional substrate bias has a strong effect on the growth behavior of Ir in such a way that preferential growth of iridium (001) on sapphire (11−20) at high deposition rates and at substrate temperatures as low as 350 °C becomes feasible.