Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using currentvoltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.