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Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs

Umfassende Studie der Streumechanismen für Elektronen in 4H-SiC MOSFETs
: Uhnevionak, Viktoryia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter

Postprint urn:nbn:de:0011-n-3499530 (3.6 MByte PDF)
MD5 Fingerprint: 5854ed046c94575a35a60d5671c9e235
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Created on: 4.8.2015

IEEE transactions on electron devices 62 (2015), No.8, pp.2562-2570
ISSN: 0018-9383
Bundesministerium für Bildung und Forschung BMBF
Program Inter Carnot Fraunhofer (PICF); 01SF0804; MobiSiC
Journal Article, Electronic Publication
Fraunhofer IISB ()
electron mobility; hall effect; scattering mechanisms; SiC MOSFET

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using currentvoltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.