Simulations based on diffusion-limited reaction rates were able for the first time to reproduce platinum profiles in silicon for in-diffusion in a wide temperature range from 730 to 950 °C and outdiffusion associated with the ramping-down of the temperature at the end of an industrial diffusion process at 830 °C. A rigorous analysis of the out-diffusion and short-time in-diffusion profiles allowed narrowing down the parameter range for the intrinsic point defects in silicon.
