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Modeling platinum diffusion in silicon

Modellierung der Diffusion von Platin in Silizium
: Badr, Elie; Pichler, Peter; Schmidt, Gerhard

Fulltext urn:nbn:de:0011-n-3092858 (1.4 MByte PDF)
MD5 Fingerprint: bda7d301563505a206691db92127c0c7
Created on: 15.10.2014

Journal of applied physics 116 (2014), No.13, Art. 133508, 7 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article, Electronic Publication
Fraunhofer IISB ()
platinum; silicon; diffusion; interstitials; vacancies

Simulations based on diffusion-limited reaction rates were able for the first time to reproduce platinum profiles in silicon for in-diffusion in a wide temperature range from 730 to 950 °C and outdiffusion associated with the ramping-down of the temperature at the end of an industrial diffusion process at 830 °C. A rigorous analysis of the out-diffusion and short-time in-diffusion profiles allowed narrowing down the parameter range for the intrinsic point defects in silicon.