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  4. Dielectric layers suitable for high voltage integrated trench capacitors
 
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2011
Journal Article
Title

Dielectric layers suitable for high voltage integrated trench capacitors

Other Title
Dielektrische Schichten für hochspannungstaugliche integrierte Grabenkondensatoren
Abstract
In this work, two different dielectric stacks consisting of silicon dioxide (SiO2) and silicon nitride (Si3N4) are analyzed regarding their suitability as dielectrics in a high voltage trench capacitor. The processing of the dielectric layers and the resulting edge-coverage in the trench holes are described. Voltage and temperature dependence of the trench capacitance are analyzed and compared with planar capacitors for reference. The leakage currents are measured and the current transport mechanisms are analyzed. The outstanding properties of the devices are a high capacitance per area (1.25 nF/mm2 for SiO2 and 1.5 nF/mm2 for Si3N4), a low temperature coefficient (SiO2: 18 ppm/K; Si3N4: 85 ppm/K from 25100 °C), and a low leakage current (<1x10−6 A) for voltages up to 400 V for Si3N 4.
Author(s)
Dorp, J. vom
Erlbacher, T.  
Bauer, A.J.
Ryssel, H.
Frey, L.
Journal
Journal of vacuum science and technology B. Microelectronics and nanometer structures  
Conference
Workshop on Dielectrics in Microelectronics (WoDiM) 2010  
File(s)
Download (868.14 KB)
Rights
Use according to copyright law
DOI
10.24406/publica-r-224334
10.1116/1.3525283
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • high voltage capacitors

  • integrated capacitors

  • monolithic integration of passives

  • trench capacitors

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