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1988
Journal Article
Title

X-ray lithography

Abstract
X-ray lithography with wavelengths between 0.2 and 5 nm provides both high-structural resolution as good as 0.1 My m and a wide scope of advantages for the application in circuit production. Examples for this better process performance compared to optical techniques are: lower particle and dust sensitivity, applicability of simple-layer resist technique, high depth of focus without any influence of substrate material and chip topography, and presumably, the highest throughput of all lithography methods which are able to go into the submicron range. However, the introduction of x-ray lithography into the semiconductor production means a revolutionary change of production technology. (IMT)
Author(s)
Heuberger, A.
Journal
Journal of vacuum science and technology B. Microelectronics and nanometer structures  
Language
English
Fraunhofer-Institut für Siliziumtechnologie ISIT  
Keyword(s)
  • compact storage ring

  • Kompaktspeicherring

  • mask technology

  • Maskentechnologie

  • Röntgenlithographie

  • Röntgenresist

  • X-ray lithography

  • X-ray resist

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