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  4. W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
 
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2019
Conference Paper
Title

W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology

Abstract
In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159K (1.9 dB) with lowest values of 132K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15K compared to the reference technology in combination with superior MMIC yield.
Author(s)
Thome, Fabian  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leuther, Arnulf  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Heinz, Felix  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Ambacher, Oliver  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
IEEE MTT-S International Microwave Symposium, IMS 2019  
Project(s)
RadioNet4
Funder
European Commission EC  
Conference
International Microwave Symposium (IMS) 2019  
Open Access
File(s)
N-549651.pdf (2.01 MB)
Rights
Under Copyright
DOI
10.24406/publica-r-404812
10.1109/MWSYM.2019.8700792
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • balanced amplifier

  • high-electron-mobility transistor (HEMT)

  • low-noise amplifier (LNA)

  • millimeter-wave integrated circuit (MMIC)

  • E-band

  • W-band

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