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2011
Konferenzbeitrag
Titel

Monolithic RC-snubber for power electronic applications

Alternative
Monolithischer RC-Snubber für Leistungselektronische Anwendungen
Abstract
In this work, we present a monolithic RC-snubber for power electronic applications that outperforms state of the art RC-snubbers in terms of characteristic electrical parameters. The principle device structure as well as the process technology is presented. The outstanding properties of the device are a high capacitance per area (1.5 nF/mm2), a low temperature coefficient of the capacitance value (85 ppm/°C) and a low leakage current (<1 nA) for voltages up to 250 V. Characteristic electrical parameters of the single device and in a typical application are shown. In comparison to a SMD snubber, the monolithic RC-snubber shows a significant reduction of overvoltage during switching and enhanced electromagnetic noise suppression.
Author(s)
Dorp, Joachim vom
Universität Erlangen-Nürnberg
Berberich, Sven E.
SEMIKRON Elektronik GmbH
Erlbacher, Tobias
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Bauer, Anton J.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Ryssel, Heiner
Universität Erlangen-Nürnberg
Frey, Lothar
Universität Erlangen-Nürnberg
Hauptwerk
IEEE Ninth International Conference on Power Electronics and Drive Systems, PEDS 2011
Konferenz
International Conference on Power Electronics and Drive Systems (PEDS) 2011
DOI
10.1109/PEDS.2011.6147217
File(s)
003.pdf (731.44 KB)
Language
Englisch
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IISB
Tags
  • capacitance

  • capacitor

  • resistance

  • resistor

  • silicon

  • snubber

  • switch

  • capacitance values

  • device structures

  • electrical parameter

  • electromagnetic noise...

  • low temperature coeff...

  • low-leakage current

  • over-voltages

  • power electronic appl...

  • process technology

  • state of the art

  • typical application

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