Monolithic RC-snubber for power electronic applications

In this work, we present a monolithic RC-snubber for power electronic applications that outperforms state of the art RC-snubbers in terms of characteristic electrical parameters. The principle device structure as well as the process technology is presented. The outstanding properties of the device are a high capacitance per area (1.5 nF/mm2), a low temperature coefficient of the capacitance value (85 ppm/°C) and a low leakage current (<1 nA) for voltages up to 250 V. Characteristic electrical parameters of the single device and in a typical application are shown. In comparison to a SMD snubber, the monolithic RC-snubber shows a significant reduction of overvoltage during switching and enhanced electromagnetic noise suppression.