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Monolithic RC-snubber for power electronic applications

Monolithischer RC-Snubber für Leistungselektronische Anwendungen
: Dorp, Joachim vom; Berberich, Sven E.; Erlbacher, Tobias; Bauer, Anton J.; Ryssel, Heiner; Frey, Lothar

Postprint urn:nbn:de:0011-n-1954431 (731 KByte PDF)
MD5 Fingerprint: 8118bd4fe84a93cde4942ebd7a29a1c8
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Created on: 23.2.2012

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Ninth International Conference on Power Electronics and Drive Systems, PEDS 2011 : Held in Singapore on 5 - 8 December 2011
New York, NY: IEEE, 2011
ISBN: 978-1-61284-999-7 (Print)
ISBN: 978-1-4577-0000-2 (Online)
International Conference on Power Electronics and Drive Systems (PEDS) <9, 2011, Singapore>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
capacitance; capacitor; resistance; resistor; silicon; snubber; switch; capacitance values; device structures; electrical parameter; electromagnetic noise; low temperature coefficients; low-leakage current; over-voltages; power electronic applications; process technology; state of the art; typical application

In this work, we present a monolithic RC-snubber for power electronic applications that outperforms state of the art RC-snubbers in terms of characteristic electrical parameters. The principle device structure as well as the process technology is presented. The outstanding properties of the device are a high capacitance per area (1.5 nF/mm2), a low temperature coefficient of the capacitance value (85 ppm/°C) and a low leakage current (<1 nA) for voltages up to 250 V. Characteristic electrical parameters of the single device and in a typical application are shown. In comparison to a SMD snubber, the monolithic RC-snubber shows a significant reduction of overvoltage during switching and enhanced electromagnetic noise suppression.