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  4. CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models
 
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2008
Conference Paper
Title

CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models

Abstract
Complete modelling of electrically controlled nanoscale gas sensors with Poisson, Wolkenstein, Fokker-Planck and continuity is presented. Based on a plausible Drift explanation we developed suitable models for sensitivity control and operational modes. An onset for CMOS-complying annealing procedures is given.
Author(s)
Velasco-Velez, J.J.
Doll, T.
Chaiyboun, A.
Wilbertz, C.
Wöllenstein, J.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Bauersfeld, M.-L.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Mainwork
IEEE Sensors 2008, the Seventh IEEE Conference on Sensors  
Conference
Conference on Sensors 2008  
Open Access
File(s)
Download (633.36 KB)
Rights
Use according to copyright law
DOI
10.1109/ICSENS.2008.4716394
10.24406/publica-r-360004
Additional link
Full text
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • CMOS integrated circuits

  • annealing

  • gas sensor

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