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CMOS-compatible field effect nanoscale gas-sensor: Operation and annealing models

 
: Velasco-Velez, J.J.; Doll, T.; Chaiyboun, A.; Wilbertz, C.; Wöllenstein, J.; Bauersfeld, M.-L.

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Postprint urn:nbn:de:0011-n-941821 (633 KByte PDF)
MD5 Fingerprint: 446ff43259b7b579a20c665e3b96d8b2
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Created on: 12.8.2010


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE Sensors 2008, the Seventh IEEE Conference on Sensors : October 26-29, 2008, Lecce (Italy)
New York, NY: IEEE, 2008
ISBN: 1-4244-2581-5
ISBN: 978-1-4244-2580-8
pp.106-109
Conference on Sensors <7, 2008, Lecce/Italien>
English
Conference Paper, Electronic Publication
Fraunhofer IPM ()
CMOS integrated circuits; annealing; gas sensor

Abstract
Complete modelling of electrically controlled nanoscale gas sensors with Poisson, Wolkenstein, Fokker-Planck and continuity is presented. Based on a plausible Drift explanation we developed suitable models for sensitivity control and operational modes. An onset for CMOS-complying annealing procedures is given.

: http://publica.fraunhofer.de/documents/N-94182.html