Comparative spatially resolved characterization of a Czochralski-grown silicon crystal by different laser-based imaging techniques

The axial distribution of electrical and optical properties of a 4 inch Czochralski-grown silicon single crystal were analyzed by different methods that can be applied in the scanning mode. These methods were tested with respect to the suitability to reveal growth striations. The residual stress was visualized by SIRIS (Scanning Infrared Stress Inspection System) and SIREX (Scanning Infrared Stress Explorer), the electrical resistivity by LPS (Lateral Photovoltage Scanning) and SRP (Spreading Resistance Profiling), and the lifetime of the minority charge carriers by MDP (Microwave Detected Photoconductivity) mapping. The concentration of interstitial oxygen (Oi) across the growth striations was determined by FTIR (Fourier Transform Infrared) spectroscopy. We demonstrate for the first time on the micrometer scale that the Oi scan is very well-correlated with the profile of Ds (difference of the in-plane principal stress components). The stress field is tensile oriented in growth direction, i. e. perpendicularly to the growth striations. The stress concentration coefficient has been estimated to be in the order of 1E-13 Pa 1/cm³ what does agree well with previous XRD results.