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  4. Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis
 
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2010
Conference Paper
Title

Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis

Abstract
In this paper a rigorous three dimensional EUV mask simulation model is presented. The mask near field is simulated with the Waveguide method which is similar to the RCWA approach. Additionally the method is extended by a so called decompositions technique. The mask image is computed by coupling the Waveguide method with a fully vectorial imaging simulation model based on an extended Abbe approach. The basic theory of the models is explained. The optimization and combination of both simulation approaches enables the simulation and analysis of larger EUV mask areas required for the analysis of complex three dimensional EUV mask structures as well as the very fast simulation of standard sized EUV mask areas required in the context of source mask optimizations. Corresponding simulation examp les like a rigorous source mask optimization and a mask induced imaging artifact analysis of a larger mask area demonstrate the capabilities and the performance of the new simulation system.
Author(s)
Evanschitzky, P.  
Fühner, T.
Shao, F.
Erdmann, A.  
Mainwork
26th European Mask and Lithography Conference  
Conference
European Mask and Lithography Conference (EMLC) 2010  
DOI
10.1117/12.863102
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • rigorous mask simulation

  • image simulation

  • source mask optimization

  • mask induced imaging artifacts

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