Through silicon vias in micro-electromechanical systems

Through silicon vias (TSV) are widely discussed for 3D integration in CMOS devices to pursue the aggressive scaling of the historical Moore's law. Micro-electro mechanical systems (MEMS) can take benefit from this technology in order to combine the MEMS with an integrated circuit (IC) or to enhance the robustness of MEMS. The technological aspects of TSV with regard to the application for MEMS will be introduced. A typical pad structure of such a system is taken to evaluate essential process steps like wafer thinning, TSV hole formation and film deposition.