Kinetics of chemical vapor deposition of titanium nitride

The paper presents the results of the chemical vapor deposition of TiN under reduced pressure using a gas mixture of TICI4, H2 and N2 as a precursor. In order to predict results of CVD experiments on fibers, the parameters of the formal kinetics of the chemical reaction on nonporous substrate were evaluated and a model equation for the deposition rate has been proposed. The deposition process of TiN was simulated by a modified PHOENICS-CVD software program using a 2d-axisymmetric model. The results of the simulation were presented in terms of concentration as well as growth profiles in axial and radial direction of the reactor. It has been found, that the proposed model equation described the process for TiN deposition at the given experimental conditions very well.