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2011
Conference Paper
Title

Reliability testing and failure analysis of 3D integrated systems

Abstract
3D integration comes with the introduction of many new processes and materials that may affect behavior and reliability of the overall system. For reliability testing of 3D integration technologies a 3-level test chip has been designed that includes Through Silicon Vias (TSV's) and assembly layers and that allows evaluation of yield and electrical parameters under steady state (DC) and RF signal conditions. Additionally, this (stacked) chip delivers reliability values when used within the standardized procedures defined by JDEC. Subsequent Physical Failure Analysis has been performed using a novel plasma-FIB system that allows efficient chip access and first line analysis thanks to its high mill rates and good image resolution. In this paper, the test chip design, reliability testing and physical analysis details will be presented.
Author(s)
Klumpp, A.
Ramm, P.
Franz, G.
Rue, C.
Kwakman, L.
Mainwork
IEEE 14th International Interconnect Technology Conference and Materials for Advanced Metallization, IITC/MAM 2011  
Conference
International Interconnect Technology Conference (IITC) 2011  
Materials for Advanced Metallization Conference (MAM) 2011  
DOI
10.1109/IITC.2011.5940362
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
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