Data Retention in co-doped HZO FeCAPs: Roles of FE Thickness and Thermal Budget

This study investigates data retention (DR) in co-doped Hafnium Zirconium Oxide (HZO) ferroelectric capacitors (FeCAPs) under high-temperature stress. Imprint, due to charge injection at an metal/ferroelectric (M/FE) interface, impacts DR, especially in opposite-state retention. The vulnerability to imprint is shown to be mitigated by high annealing temperature (>600∘C), operations under high program electric fields (≃4MV/cm), and thick FE layer (tFE≃15 nm). Two samples demonstrated DR exceeding 1000 hours at 125∘C, with a model suggesting DR for over 10 years for the optimally annealed samples, supporting FeCAP in high-temperature applications.