Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM Capacitors

Hafnium zirconium oxide (HZO) doesn't meet en-durance requirements for certain applications such as data logging. We introduce aluminum-doped HZO (HZAO)-based metal-ferroelectric-metal (MFM) capacitors integrated in BEoL to improve endurance characteristics. Wake-up characteristics, 2Pr and 2Ec are studied. Based on measurements under severe conditions, endurance was extrapolated with respect to electric field, temperature, frequency, and MFM area. Outstandingly enhanced endurance of above 1015 cycles are predicted. This enables usage of ferroelectric memories for data logging applications.