High-fidelity single-electron shuttling in industrially fabricated spin qubit devices

We have fabricated single-electron shuttling channels in Si/SiGe heterostructures within an industrial 200 mm production line as building block for a scalable quantum computing architecture with spin qubits. Shuttling is achieved via an adiabatically moved quantum dot which is formed by a series of only four individual, sinusoidal voltage signals, applied to a dense grid of gate electrodes, enhancing scalability. The gate module comprises a triple metal gate process, where one gate layer uses electron-beam lithography to achieve a pitch below 100 nm in the complex grid architecture. With the device presented in this study, we have been able to achieve an electron shuttling success rate higher than 99.9 % across a distance of 4.5 μm.