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2025
Conference Paper
Title
A Ka-Band Harmonic-Tuned GaN Doherty Power Amplifier
Abstract
This paper presents the design of a harmonic-tuned Doherty power amplifier (HT-DPA) in which the second and third harmonic (2f0, 3f0) drain impedances are
tuned to enhance the DPA’s power-added efficiency (PAE). In addition to performing the required impedance inversion, the impedance inverting network (IIN) controls the phase of the reflection coefficient at 2f0 and 3f0 while absorbing the active device’s equivalent output capacitance. The relevance of the IIN is demonstrated through the implementation of a Ka-band HT-DPA manufactured on Fraunhofer IAF’s 100-nm Gallium Nitride (GaN) process. Continuous-wave measurements indicate that from 24.5 to 29 GHz, the HT-DPA delivers an output power of 32-33 dBm associated with a peak PAE ≥ 30% and a PAE ≥ 24% and ≥ 20% at 6 and 8 dB back-off, respectively.
tuned to enhance the DPA’s power-added efficiency (PAE). In addition to performing the required impedance inversion, the impedance inverting network (IIN) controls the phase of the reflection coefficient at 2f0 and 3f0 while absorbing the active device’s equivalent output capacitance. The relevance of the IIN is demonstrated through the implementation of a Ka-band HT-DPA manufactured on Fraunhofer IAF’s 100-nm Gallium Nitride (GaN) process. Continuous-wave measurements indicate that from 24.5 to 29 GHz, the HT-DPA delivers an output power of 32-33 dBm associated with a peak PAE ≥ 30% and a PAE ≥ 24% and ≥ 20% at 6 and 8 dB back-off, respectively.
Author(s)
Conference