Silicon carbide growth and properties for quantum technologies

The material properties of silicon carbide play a pivotal role in the quality of color centers and, thus, the performance of quantum devices. This chapter describes the fundamental structural properties of silicon carbide that are pertinent to quantum applications. It outlines the fabrication processes of silicon carbide wafers and elucidates how they impact the material properties. In contrast to SiC electronics, quantum devices necessitate either free-standing structures or hetero-substrates to facilitate light confinement. This chapter presents various methods for fabricating hetero-substrates, or SiC-on-insulator substrates. It also provides an overview of point defect engineering techniques for preparing the material for the subsequent generation of color centers. Additionally, it describes the isotopic requirements of quantum applications and the production of isotope-controlled materials.