Investigation of Dominant Flicker Noise Source in Ferroelectric FETs with Fluorinated Interface

Hafnium oxide (HfO<inf>2</inf>)-based ferroelectric fieldeffect transistors are known for their excellent retention, scalability, and memory window. However, achieving high endurance remains a challenge. In this study, a fluorination treatment is introduced, significantly improving endurance and stability of devices. Additionally, flicker noise methods, along with the investigation of the dominant noise source, are utilized after the ferroelectric HfO<inf>2</inf> film has been woken up and broken down (after open and closure of memory window) to gain a deeper understanding of the underlying defect interactions in ferroelectric Field-Effect Transistors and the impact of ferroelectric properties on device noise behavior. In this regard, the defect distribution and its change with degradation is investigated. This distribution is shifted for fluorinated devices to gate oxide area. Likewise, under similar conditions the dominant flicker noise source was investigated. Here, the source is changed with the degradation of the structure to a resistance fluctuation. This change is avoided with the fluorination processes and improves the structures endurance performance.