Modeling of Multi-Trigger Resists

This paper addresses the development and modeling of a novel negative-tone photoresist, the Multi-Trigger Resist (MTR), aimed at enhancing extreme ultraviolet (EUV) lithography. The primary objectives are to create a stochastic model of the photoresist process flow and to analyze the behavior of MTR under various conditions. The model incorporates statistical fluctuations in photon distribution, secondary electron generation, and molecular distribution within the photoresist. Calibration with experimental data demonstrates the model’s capability in predicting critical dimension (CD), line width roughness (LWR), and dose-to-size (DtS) metrics. Results indicate that higher MTR loading and quencher addition improve performance consistency. Further investigation into different exposure types, electron blur lengths, and photoresist absorbance coefficients reveals the intricate balance required for optimizing lithographic outcomes. The findings underscore the model’s utility in guiding the design of next-generation photoresists and highlight areas for future research, including the expansion of calibration datasets and the application to various lithographic features.