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  4. A 5.6 dB NF Two-Stage 110-125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS
 
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2024
Conference Paper
Title

A 5.6 dB NF Two-Stage 110-125 GHz LNA Gain-Boosted by RC-over-Neutralization for Radar Applications in 28 nm CMOS

Abstract
This paper presents a two-stage differential LNA operating at around 120 GHz achieving a measured noise figure of 5.6 dB. We obtain a gain of 6.65 dB per stage by means of the RC-over-neutralization technique. Hence, the LNA exhibits an overall measured gain of 13.3 dB using only two stages and therefore occupies a minimal core area of only 0.03mm2. Lossy over-neutralization technique has been used so far mainly for power amplifiers, while in this work we apply it for an LNA. Furthermore, we extend this approach by adding an explicit neutralization resistance, which provides another design degree of freedom, enabling independent choice of Rn and Cn during the physical circuit implementation. We analyze systematically the Rn and Cn values to achieve simultaneously optimal NF and gain. We show that Rn causes only a minimal NF degradation, yet it enables boosting gain per stage. The circuit is realized in 28 nm bulk CMOS process and dissipates only 25.2 mW from a single 0.9 V supply. It achieves in measurement an RF-bandwidth of 15 GHz and IP1dB linearity of-17.3 dBm. The presented two-stage LNA can be useful for area saving in D-band receivers.
Author(s)
Lasserre, Victor
Technische Universität Braunschweig
Koop-Brinkmann, Sarah
Technische Universität Braunschweig
Caruso, Michele
Infineon Technologies Austria AG
Maistro, Daniele Dal
Infineon Technologies Austria AG
Volpato, Giovanni
Infineon Technologies Austria AG
Le, Quanghuy
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Kämpfe, Thomas  orcid-logo
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Ziegler, Christian
Technische Universität Braunschweig
Stapelfeldt, Finn Niclas
Technische Universität Braunschweig
Issakov, Vadim V.
Technische Universität Braunschweig
Mainwork
2024 IEEE Bicmos and Compound Semiconductor Integrated Circuits and Technology Symposium Bcicts 2024
Funder
Bundesministerium für Bildung und Forschung  
Conference
2024 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2024
DOI
10.1109/BCICTS59662.2024.10745661
Language
English
Fraunhofer-Institut für Photonische Mikrosysteme IPMS  
Keyword(s)
  • D-band

  • Low Noise Amplifiers

  • Neutralization

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