Optimizing New Generation of ALD Precursors and Annealing Conditions for Ferroelectric HZO for Enhanced Memory Performance

Hafnium-zirconium oxide-based metal-ferroelectric-metal capacitors were fabricated using a new generation of high temperature-based metal-organic precursors. The concentration of Hf : Zr was varied (1:1, 2:3, 3:2) to get ferroelectric thin films of 10 nm. These capacitors were annealed at different temperatures (650∘C,800∘C) and were characterized with material and electrical tests. The longterm reliability and stability measured by endurance and retention tests. The non-annealed 1:1&3:2HZO showed good polarization switching characteristics with 2Pr of 32μC/cm2 and 24μC/cm2 at 2.8MV/cm respectively. The non-annealed 1:1 HZO could switch for 108 cycles without breakdown and could retain with 5% retention loss when extrapolated for 10 years.