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  4. A 0.6V Supply Ultra-Compact Voltage Reference Exploiting MOS Threshold Correlations
 
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April 13, 2025
Conference Paper
Title

A 0.6V Supply Ultra-Compact Voltage Reference Exploiting MOS Threshold Correlations

Abstract
Voltage references provide a critical function to nearly any System-on-Chip (SoC) and will remain indispensable in future process nodes. New challenges arise from aggressive scaling, for example the degrading linearity of bipolar devices in FinFET CMOS [1]. While the classic bandgap reference may often provide a robust performance [2], it cannot serve the reduced supply headroom in modern technologies. Several alternative solutions were developed which can work in a Sub-1V domain, like in [3]-[5]. However, the pn-junction voltage at cold temperatures (- 0.8V) presents a physical limit for operation at very low supply. Hence, the decreasing (digital) core voltages of VDD ≤ 0.8V motivate a MOS-based reference, like in this paper.
Author(s)
Eberlein, Matthias  
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Ruping, Sebastian
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Mainwork
IEEE Custom Integrated Circuits Conference, CICC 2025. Proceedings  
Conference
Custom Integrated Circuits Conference 2025  
DOI
10.1109/CICC63670.2025.10983303
Language
English
Fraunhofer-Institut für Elektronische Mikrosysteme und Festkörper-Technologien EMFT  
Keyword(s)
  • MOS Threshold Voltage

  • Temperature Coefficient

  • Bandgap Reference

  • Threshold Correlation

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