Fabrication of single-electron shuttling channels in a silicon CMOS fab using high-throughput electron beam lithography

As a building block for a silicon-based quantum processor architecture we fabricated single-electron shuttling channels within an industrial 200mm production line. Shuttling is achieved via a moving quantum dot, which is formed by a series of voltage signals, applied to a dense grid of gate electrodes on top of a Si/SiGe heterostructure. The gate module comprises a triple metal gate process, where one gate layer uses variable-shaped electron beam lithography (VSB) in order to achieve 80nm pitch of the complex grid architecture. It is shown that VSB is a suitable tool for low-volume industrial fabrication of complex quantum processors based on 2D-shuttling arrays. These devices were electrically characterised at cryo temperatures and excellent shuttling fidelity is presented.