Gain Expansion Generator Based on a Reduced Conduction Angle for H-Band Applications

This paper reports the characterization of a sub-millimeter-wave gain expansion generator fabricated in a 35-nm indium gallium arsenide metamorphic high-electron-mobility transistor technology. The circuit exhibits a gain expansion of 2 to 3.9 dB in the 280−325 GHz frequency range by operating a single-stage amplifier with a reduced conduction angle. Simulated and measured S-parameters are compared under class-A, class-B, and class-C bias conditions. The frequency response of the gain expansion is analyzed for class-B and various class-C bias conditions.